TECHNICAL INFORMATION

Achieved a film thickness distribution of ±3-5% or less compared to the target film thickness of 3 μm. Example of copper sulfate plating test results

Our plating equipment for silicon wafers has been introduced in many universities and research institutes, and here we introduce data from actual experiments conducted using the equipment.

This time, the standard equipment for 8-inch wafers was used, and the target film thickness was 3 μm.

〇Equipment used

A-52 SILICON WAFER PLATING LABORATORY EQUIPMENT SET
Programmable Power Supply YPP15100WA

〇Experimental condition

Plating bathCu-sulfate electroplating solution with commercial additives
Sample 8inch Wafer with sputter-deposited Cu film
C.D1A/dm2
Target thickness3 μ m
Anode Phosphorus Copper
Bath TempR.T. (25ºC ± 1ºC)
AgitationAir bubbling, Paddle agitation

〇Sample Specification

Sample Size8inch Silicon Wafer Test Piece
Pattern and wafer specificationOctagonal/square line (Spiral pattern)
L/S5 – 100 μm
Round/Square Bump, Diameter10 – 500 μm
Wafer thickness725 μm
Sputter-deposited Cu300nm
Resist thickness5 μm

〇Sample Appearance / State after plating

Upper left: Wafer appearance / Upper right: Enlarged pattern 
Lower left: Film state in the center of the pattern (3D) / Lower right: Enlarged view of the film state in the center of the pattern

〇Sampling points

After plating, we measured the plating film thickness at the following 9 points.

Plating film thickness measurement results

The plating film thickness values for each sample point are as follows. Film thickness distribution of ±3-5% or less is achieved for a plating target of 3 μm.

Sample Points□40μm □100μm 
a3.012 3.006
b3.0062.934
c3.0362.857
d2.9592.871
e3.1893.026
f3.1913.023
g2.9612.975
h2.9292.867
i3.0722.856
Ave3.0392.935
Max3.1913.026
Min2.9292.856
Ran0.2620.170
Film Thickness(μm)

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